Polishing and Reclaim of Diamond Substrates


Polishing Characteristics

Excellent local and global surface finish (long range and short range roughness) 1 Å – 3 nm RMS roughness over 5x5 μm2 depending on the grain size (AFM), free of surface and subsurface damage


MEMS & NEMS, Electronic device substrates, HEMTs, RF devices, MMICs, HFETs, Passive electronics – High thermal conductivity requirements

Wafer Specifications

  • Dimension: Any shape up to 100 mm diameter
  • Thickness: 200 nm to 1 mm
  • Type: Single Crystal, Microcrystalline, Nanocrystalline, Ultra-nano crystalline, Any doping
  • Starting Surfaces: Mechanically polished or as-grown

Please contact Sinmat for your specific needs

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